OpTecBB

Photonics Days 2026

7 – 8 Oct 2026 | Berlin , Germany

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Wednesday, 7 October 2026 | 14:00 - 18:00

Analytical electron microscopy for photonics II

Location:Curie-CabinetTrack:in presence

Chair:

Jonas Lähnemann (Paul-Drude-Institut für Festkörperelektronik)

Co-Chair:

Kagiso Loeto (Paul-Drude-Institut für Festkörperelektronik)

Abstract:

Electron beam techniques have emerged as powerful tools for characterising and fabricating a myriad of materials systems at length scales ranging from the micrometres to nanometres. More recently also pulsed electron beams have been used to obtain temporal resolution.

This makes such techniques exciting for next-generation semiconductor and photonics research. Through the use of high-energy electron beams in either scanning or transmission microscopicmodes, the spectroscopic, chemical, structural, and topographical properties of such systems can be investigated using techniques such as cathodoluminescence spectroscopy (CL), scanning transmission electron microscopy (STEM), electron energy loss spectroscopy (EELS), electron tomography (ET), energy dispersive X-ray spectroscopy (EDS), and electron backscatter diffraction (EBSD).

This session will bring together electron beam technique experts to present their latest applications, discuss scientific results and evaluate recent developments inmeasurement systems. Furthermore, it will provide the broader photonics community to get an idea what they could learn using these microscopy techniques.

During the tour to Paul-Drude-Institut (PDI) on Friday, there will be the chance to visit the new world-class “Application Laboratory Time-resolved Cathodoluminescence Spectroscopy(ZALKAL)”. This lab is also open to collaborations with and service measurements for academic and industrial partners.

Agenda:

14:00-14:30 "SEM, EBL, and CL for deterministic fabrication and high-resolution metrology of nanophotonic devices", Sven Rod (Technische Universität Berlin)

14:30-15:00 "Electron microscopy as a tool for characterizing semiconductor material, analyzing device degradation, and conducting quality control at the FBH", Carsten Netzel (Ferdinand-Braun-Institut)

15:00-15:00 "Correlative electron microscopy analyses on optoelectronic semiconductor devices", Daniel Abou-Ras (Helmholtz-Zentrum Berlin HZB)

15:30-16:00 "Correlated high-resolution electron backscatter diffraction and cathodoluminescence mapping for studying the distortion tensor around isolated GaN dislocations", Domenik Spallek (Paul-Drude-Institut für Festkörperelektronik)

16:00-16:30 Coffee Break

16:30-17:00 "Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale", Cléo Santini (Centre d’Élaboration de Matériaux et d’Etudes Structurales (CEMES))

17:00-17:30 "From Defects to devices: Electron-based characterization of III-nitride semiconductor nanowire", Gwénolé Jacopin (Institut Néel)

17:30-18:00 "CL and EBIC microscopy of nitride based optoelectronic devices: into carrier transport and recombination at the nanometerscale", Gordon Schmid (Institute of Physics, Otto-von-Guericke-University Magdeburg)

Location image

Session location Curie-Cabinet